Ucwaningo olusha lwethimba leYunivesithi yaseWuhan: ukusebenza kahle kwe-LED encane ebomvu kukhuphuke ngo-30%

Muva nje, ithimba likaZhou Shengjun eWuhan University lithuthukise ungqimba olusha lwe-Schottky-contact intrinsic current blocking layer (SCBL), olungathuthukisa ukusabalala kwamanje esifundeni esisebenzayo. Futhi luthuthukise ukusebenza kahle kokukhipha ukukhanya kwe-AlGaInP red. I-LED encane(LEE).

Umdwebo ongenhla ukhombisa (a) isakhiwo sedivayisi, kanye (b) inqubo yokukhiqiza esekelwe esakhiweni esiqondile se-AlGaInP sokukhanya okubomvu I-Mini LED nge-SCBL. (c) i-SCBL kanye (d) isakhiwo esibomvu esisekelwe ku-AlGaInP esiqondileimakroskopuizithombe.

Umholi wocwaningo uShengjun Zhou uthe ithimba lisebenzise izakhiwo zokuxhumana zeSchottky phakathi kwe-indium tin oxide (ITO) ne-p-GaP, kanye nezakhiwo zokuxhumana ze-ohmic phakathi kwe-ITO ne-p-GaP+ ukwakha i-SCBL, okwaboniswa yindlela yobude bokudlulisa.

UZhou Shengjun uthe i-SCBL inganciphisa ngempumelelo ukuminyana kwamanje okuzungeze i-p electrode futhi ikhuthaze ukusabalala kwamanje okufanayo, ngaleyo ndlela ithuthukise ukusebenza kahle kokukhipha ukukhanya kwe-AlGaInP red Mini LED. Ngenxa yokusabalala kwamanje okuthuthukisiwe kanye nokukhishwa kokukhanya, ama-Mini LED ane-SCBL abonisa ukusatshalaliswa okufanayo kokuqina kokukhanya, amandla aphezulu okukhipha optical, kanye nokusebenza kahle kwe-quantum yangaphandle (EQE).

I-AlGaInP red Mini LED isetshenziswa kabanzi njengengxenye ebalulekile yombala ogcwele izibonisi ngenxa yokukhanya kwayo okuphezulu, ukusetshenziswa kwamandla aphansi kanye nokuphila isikhathi eside kwenkonzo.

Kodwa-ke, ukuminyana kwamanje kuzungeze i-p electrode kuphumela ekusabalaleni kwamanje okungalingani esifundeni esisebenzayo. Ngaphezu kwalokho, ngoba iningi lama-photon akhiqizwa esifundeni esisebenzayo amuncwa noma abonakaliswa yi-oppaque metal p electrode, ukusebenza kahle kokukhipha ukukhanya (LEE) kwe-AlgainP-based Mini LED kuphansi.

Ukuze kuxazululwe le nkinga, abacwaningi bethule i-SCBL ukuthuthukisa ukusabalala kwamanje kanye nokukhishwa kokukhanya kwama-Mini LED asekelwe ku-AlgainP. Ngokusebenzisa ukuxhumana kwe-Schottky phakathi kwe-ITO ne-P-gap, i-SCBL ingavimbela ukuminyana kwamanje eduze kwe-p electrode. Ugesi uphoqelelwa esifundeni esisebenzayo ngesendlalelo sokuxhumana se-P-GAP + ohmic ukuze kugwenywe ukumuncwa nokubonakaliswa kokukhanya yi-p electrode yensimbi engacacile.

Imiphumela ikhombisile ukuthi ukusebenza kahle kwe-quantum yangaphandle (i-EQE) ye-AlGaInP Mini LED esebenzisa i-SCBL ingakhushulwa ngo-31.8% kugesi ongu-20mA uma kuqhathaniswa ne-AlGaInP Mini LED ngaphandle kwe-SCBL. Ngakho-ke, ubuchwepheshe be-SCBL kulindeleke ukuthi busetshenziswe ekukhiqizweni okukhulu kwe-AlgainP Red Mini LED esebenza kahle esikhathini esizayo.

Kuyaphawuleka ukuthi ithimba leZhou Shengjun laseWuhan University nalo likhiphe imiphumela eminingana yocwaningo lwe-LED. Isibonelo, emkhakheni wama-LED ajulile e-ultraviolet, ithimba lethule i-tunnel junction e-Algan-based ultra-thin (26 nm) ku-LED ejulile ye-ultraviolet, okwandise ukusebenza kahle kokuguqulwa kwe-electro-optical kwe-LED ejulile ye-ultraviolet ngo-5.5%.

Emkhakheni we-Mini LED, ithimba lithuthukise ukusebenza kwama-chip e-LED aluhlaza okwesibhakabhaka nokuluhlaza ngokusebenzisa i-Full-angle Distributed Bragg Reflector (DBR). Ngaphansi kwesimo somjovo wamanje we-10mA, amandla okukhipha okukhanya kwe-Mini LED eluhlaza okwesibhakabhaka nokuluhlaza asekelwe ku-ITO/DBR akhuliswa cishe ngo-7.7% no-7.3%, ngokulandelana.