Tsvagiridzo itsva yechikwata cheYunivhesiti yeWuhan: kushanda zvakanaka kweMini LED tsvuku kwakawedzera ne30%

Munguva pfupi yapfuura, chikwata chaZhou Shengjun paWuhan University chakagadzira Schottky-contact intrinsic current blocking layer (SCBL), iyo inogona kuwedzera kupararira kwemagetsi munzvimbo inoshanda. Uye kuvandudza kushanda kweAlGaInP red extraction efficiency. Mini LED(LEE).

Dhayagiramu iri pamusoro inoratidza (a) chimiro chemudziyo, uye (b) maitiro ekugadzira zvichibva pachimiro chemwenje mutsvuku weAlGaInP Mini LED neSCBL. (c) SCBL uye (d) Chimiro chemwenje mutsvuku chakavakirwa paAlGaInP chakamira pachigadziko chemwenje cheMini LED top view opticalmaikorosikopumifananidzo.

Mutungamiriri wetsvagurudzo Shengjun Zhou akati chikwata chakashandisa hunhu hweSchottky pakati peindium tin oxide (ITO) nep-GaP, pamwe nehunhu hweohmic pakati peITO nep-GaP+ kugadzira SCBL, izvo zvakaratidzwa nenzira ye transfer length.

Zhou Shengjun akati SCBL inogona kuderedza kuzara kwemagetsi akakomberedza p electrode uye kukurudzira kupararira kwemagetsi kwakafanana, nokudaro ichivandudza kushanda zvakanaka kweAlGaInP red Mini LED. Nekuda kwekupararira kwemagetsi kwakawedzerwa uye kubviswa kwechiedza, maMini LED ane SCBL anoratidza kupararira kwakafanana kwechiedza, simba remagetsi rinobuda, uye kushanda zvakanaka kwekunze kwequantum (EQE).

AlGaInP red Mini LED inoshandiswa zvakanyanya sechinhu chakakosha chemavara akazara kuratidzwa nekuda kwekupenya kwayo kwakanyanya, kushandiswa kwesimba shoma uye hupenyu hurefu hwebasa.

Zvisinei, kuzara kwemagetsi akakomberedza p electrode kunoita kuti magetsi asawanikwe munzvimbo inoshanda. Pamusoro pezvo, nekuti akawanda ma photon anogadzirwa munzvimbo inoshanda anotorwa kana kuratidzwa ne opaque metal p electrode, light extraction efficiency (LEE) yeAlgainP-based Mini LED yakaderera.

Kuti vagadzirise dambudziko iri, vaongorori vakaunza SCBL kuti vavandudze kupararira kwemagetsi uye kuburitsa chiedza cheAlgainP-based Mini LEDs. Nekushandisa Schottky contacts pakati peITO neP-gap, SCBL inogona kudzivirira kuzara kwemagetsi kutenderedza p electrode. Iyo current inomanikidzwa kupinda munzvimbo inoshanda kuburikidza neP-GAP + ohmic contact layer kudzivirira kubatwa uye kuratidzwa kwechiedza ne opaque metal p electrode.

Zvakabuda zvakaratidza kuti external quantum efficiency (EQE) yeAlGaInP based Mini LED inoshandisa SCBL inogona kuwedzerwa kusvika ku31.8% pamagetsi e20mA zvichienzaniswa neAlGaInP based Mini LED isina SCBL. Saka, tekinoroji yeSCBL inotarisirwa kushandiswa mukugadzirwa kweAlgainP-based red Mini LED inoshanda zvakanaka mune ramangwana.

Zvakakosha kuziva kuti chikwata cheZhou Shengjun cheYunivhesiti yeWuhan chakaburitsawo mhedzisiro mitsva yekutsvaga maLED. Semuenzaniso, munyaya ye deep ultraviolet leds, chikwata chakaunza Algan-based ultra-thin tunnel junction (26 nm) mu deep ultraviolet LED, izvo zvakawedzera electro-optical conversion efficiency ye deep ultraviolet LED ne5.5%.

Munyaya yeMini LED, timu yakavandudza mashandiro emachipisi eMini LED flip ebhuruu negirini nekushandisa Full-angle Distributed Bragg Reflector (DBR). Pasi pe10mA injection current, simba remagetsi reMini LED rebhuruu negirini rinobva paITO/DBR rinowedzerwa neinenge 7.7% uye 7.3%, zvichiteerana.